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Japan Power Transistor Market Analysis

The Japan Power Transistor Market size is estimated at USD 3.08 billion in 2024, and is expected to reach USD 3.66 billion by 2029, growing at a CAGR of 3.5% during the forecast period (2024-2029).

In Japan, the automotive industry accounts for a significant share of the total demand for semiconductors in the country, having emerged as the 5th largest automobile market in 2022, as per the German Association of the Automotive Industry or VDA. The automotive industry's migration from fossil fuel vehicles to hybrid and electric vehicles drives the demand for power devices.

• As per the collaboration, an IGBT line would be installed at USJC's wafer fab, which would be the first in Japan to produce IGBTs on 300mm wafers. DENSO would contribute its system-oriented IGBT device and process technologies.
• At the same time, USJC will provide its 300mm wafer manufacturing capabilities to bring the 300 mm IGBT process into mass production, scheduled to start in the first half of 2023. IGBTs are perceived as core devices in power cards, serving as efficient power switches in inverters to convert DC and AC currents to drive and control electric vehicle motors.
• Further, in February 2022, Toshiba Electronic Devices & Storage Corporation announced that it would construct a new 300-millimeter wafer fabrication facility for power semiconductors, including transistors at Kaga Toshiba Electronics Corporation in Ishikawa Prefecture, its main discrete semiconductor production base. Construction is expected to occur in two phases, with the production start of Phase 1 scheduled for 2024. When Phase 1 reaches total capacity, Toshiba's power semiconductor production capacity will be 2.5 times that of fiscal 2021.
• Also, in January 2022, Toshiba Electronic Devices & Storage Corporation launched two silicon carbide (SiC) MOSFET dual modules: 'MG600Q2YMS3', with a voltage rating of 1200V and drain current rating of 600A and 'MG400V2YMS3', with a voltage rating of 1700V and drain current rating of 400A. The first Toshiba products with these voltage ratings joined the previously released MG800FXF2YMS3 in a 1200V, 1700V, and 3300V devices lineup.

Japan Power Transistor Industry Segmentation

The power transistors are used to amplify and regulate signals. They are made from high-performance semiconductor materials like germanium and silicon. These transistors can amplify and control a certain voltage level and handle specific ranges of high-level and low-level voltage ratings.

The study includes different products low-voltage FETs, IGBT modules, RF and microwave transistors, high-voltage FETs, IGBT transistors, and different types such as bipolar junction transistors, field effect transistors, heterojunction bipolar transistors for various end-user industries like consumer electronics, communication, and technology, automotive, manufacturing, and energy & power. The competitive landscape takes into account multiple companies' market penetration, as well as their organic and inorganic growth strategies. 

For all of the above segments, market sizes, and forecasts are provided in terms of value (USD).